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The Polysilicon-Silicon Interface

Published online by Cambridge University Press:  22 February 2011

Robert W. Keyes
Robert W. Keyes*
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

Polycrystalline silicon is frequently deposited on single crystal silicon as a part of devices. The poly is used as both a dopant source and a low resistance contact in a modern method of fabricating high gain bipolar transistors. The randomness of polysilicon and its interface with the single crystal is an inherent source of differences among nominally identical transistors, however, and is a marked departure from the trend towards more and more perfect crystals that characterizes the rest of silicon technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 239
Copyright
Copyright © Materials Research Society 1988

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References

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