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Polysilicon Emitter Transistors Manufactured using a Novel Limited Reaction Processing System

  • Fred Ruddell (a1), Colin Parkes (a1), B Mervyn Armstrong (a1) and Harold S Gamble (a1)

Abstract

This paper describes a LPCVD reactor which was developed for multiple sequential in-situ processing. The system is capable of rapid thermal processing in the presence of plasma stimulation and has been used for native oxide removal, plasma oxidation and silicon deposition. Polysilicon layers produced by the system are incorporated into N-P-N polysilicon emitter bipolar transistors. These devices fabricated using a sequential in-situ plasma clean-polysilicon deposition schedule exhibited uniform gains limited to that of long single crystal emitters. Devices with either plasma grown or native oxide layers below the polysilicon exhibited much higher gains. The suitability of the system for sequential and limited reaction processing has been established.

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References

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1. Ming, T.H. and Isaac, R.D., IEEE ED–27, 1980, pp. 20512055.
2. Neugroschel, A. et Al, IEEE ED–32, 1985, pp. 867–816.
3. LING, E. et Al, PROC 17th ESSD Research Conf., Bologna, 1987, pp. 205209.
4. Ling, E. et Al, PROC 15th, ESSDERC, 1985, p.297.
5. Rosler, R.S., Solid State Technology, 20, 1977, p.63.

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