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Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition

  • X.B. Zeng (a1), X.B. Liao (a1), H.W. Diao (a1), Z.H. Hu (a1), Y.Y. Xu (a1), S.B. Zhang (a1), C.Y. Chen (a1), W.D. Chen (a1) and G.L. Kong (a1)...

Abstract

Polymorphous Si nanowires (SiNWS) have been successfully synthesized on Si wafer by plasma enhanced chemical vapor deposition (PECVD) at 440°C, using silane as the Si source and Au as the catalyst. To grow the polymorphous SiNWS preannealing the Si substrate with Au film at 1100 °C is needed. The diameters of Si nanowires range from 15 to 100 nm. The structure, morphology and chemical composition of the SiNWS have been characterized by high resolution x-ray diffraction, scanning electron microscopy, transmission electron microscopy, as well as energy dispersive x-ray spectroscopy. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique.

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Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition

  • X.B. Zeng (a1), X.B. Liao (a1), H.W. Diao (a1), Z.H. Hu (a1), Y.Y. Xu (a1), S.B. Zhang (a1), C.Y. Chen (a1), W.D. Chen (a1) and G.L. Kong (a1)...

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