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Polyimide as a Plastic Substrate for the Flexible Organic Electroluminescent Device

Published online by Cambridge University Press:  17 March 2011

Jin-Woo Park ,
Youngkyoo Kim ,
Hyuntaek Lim ,
Cheol Min Bae ,
Il Kim ,
Shinji Ando  and
Chang-Sik Ha
Jin-Woo Park
Affiliation:
Department of Polymer Science and Engineering, Pusan National University, Busan 609 -735, Korea
Youngkyoo Kim
Affiliation:
EXSS Group, Department of Physics, The Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2BW, UK
Hyuntaek Lim
Affiliation:
Device Team, NESS Display Co., Ltd., Yongin P.O.BOX 25, Kyoung Gi-Do, 449-860, Korea
Cheol Min Bae
Affiliation:
Department of Polymer Science and Engineering, Pusan National University, Busan 609 -735, Korea
Il Kim
Affiliation:
Department of Polymer Science and Engineering, Pusan National University, Busan 609 -735, Korea
Shinji Ando
Affiliation:
Department of Organic and Polymer Materials, Tokyo Institute of Technology, Ookayama, Meguro-Ku, Tokyo 152-8552, Japan
Chang-Sik Ha
Affiliation:
Department of Polymer Science and Engineering, Pusan National University, Busan 609 -735, Korea
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Abstract

In this work, transparent flexible substrates based on polyimides(PI) with indium tin oxide (ITO) thin films for organic electroluminescent devices have been prepared. 2,2'-bis-(3,4- dicarboxyphenyl) hexafluoropropanedianhydride (6FDA) and 2,2'-bis-(trifluoromethyl)-4,4'- diaminobiphenyl (TFDB) PI films were used for transparent flexible substrates. ITO thin films were prepared at two substrate deposition temperatures of 25°C and 150°C with a typical radio- frequency (r.f.) planar magnetron sputtering system. The sheet resistance and the optical transmission properties of the fluorinated PI substrate were comparable with those for the slide glass substrate. The substrate properties are better when the deposition temperature is higher. SiO2 coating onto the fluorinated PI substrate by sol-gel reaction was also attempted to improve the optical transmission of the ITO/PI substrate. It was found that the coating of SiO2 affected on the morphology of the PI substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 814: Symposium I – Flexible Electronics 2004-Materials and Device Technology , 2004 , I7.6
Copyright
Copyright © Materials Research Society 2004

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References

1. Kim, Y., Keum, J., Kim, J.G., Lim, H., and Ha, C.S.. Adv. Mater. Opt. Electron., 10, 273 (2000).Google Scholar
2. Eastmond, G. C., Paprotny, J. and Irwin, R. S., Macromolecules, 29, 1382 (1996).Google Scholar
3. Kim, W. G. and Hay, A. S., Macromolecules, 26, 5275 (1993).Google Scholar
4. Lim, H., Bae, C., Park, J., Cho, W.J., and Ha, C.S., Synth. Metal. 137, 1017 (2003).Google Scholar
5. Matsuda, S., Ando, S. and Sawada, T., Electron. Lett. 37, 706 (2001).Google Scholar
6. Lim, H., Cho, W.J., Ha, C.S., Ando, S., Kim, Y.K., Park, C.H., and Lee, K., Adv. Mater. 14, 1275 (2002).Google Scholar
7. Wu, W. F., Chiou, B. S. and Hsieh, S. T., Semicond. Sci. Technol. 9, 1242 (1994).Google Scholar
8. Yamamoto, S., Yamanaka, T. and Ueda, Z., J. Vac. Sci. Technol. A5, 1957 (1987).Google Scholar
9. Kim, H., Gilmore, C. M., Pique, A., Horwitz, J. S., Mattoussi, H., Murata, H., Kafafi, Z. H., and Chrisey, D. B., J. Appl. Phys. 86, 6451 (1999).Google Scholar
10. Lim, H., Ph.D.dissertation, Pusan National University, Korea (2002).Google Scholar
11. Itamura, S., Yamada, M., Tamura, S., Matsumoto, T., and Kurosaki, T., Macromolecules, 26, 3490 (1993).Google Scholar
12. Fraser, D. B. and Cook, H. D., J. Electrochem. Soc. 119, 1368 (1972).Google Scholar
13. Deng, Z. B., Ding, X. M., Lee, S. T., and Gambling, W. A., Appl. Phys. Lett. 74, 2227 (1999).Google Scholar
14. Goto, D. and Anayama, H., Japanese Patent, HI-132005 (1989).Google Scholar
15. Yamamoto, S., Ueda, Z. and Sasa, K., Nitto Tech Rep (in Japanese). (1986).Google Scholar
16. Noda, K. and Tanimura, K., Electron. and Commun. Jpn. 84, 39 (2001).Google Scholar