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Polycrystalline Silicon Thin Films For Microelectronic Applications

  • Elena A. Guliants (a1), Young J. Song (a1) and Wayne A. Anderson


Polycrystalline silicon thin films with a thickness of 0.5-2μm were grown on 25nm thick Ni prelayers by d.c. magnetron sputtering from a Si target. In contrast to the conventional sputtering, the use of a thin Ni film allows the production of high crystallinity silicon at a temperature of 475°C and higher. The Ni disilicide grains formed at the Ni - growing Si film interface provide sufficient sites for the epitaxial growth of Si. The Si films with resistivity of 102-103Ω-cm possess a carrier lifetime of up to 11μs and a diffusion length of up to 3.4 μm, which makes them applicable to various microelectronic devices. As an example, Schottky diodes fabricated on 0.5μm thick Si films exhibit a forward-to-reverse current ratio of 107. The technique is easily implemented on a variety of substrates.



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1. Guliants, E. and Anderson, W.A., Proceedings of Mater. Res. Soc. Symp. (Fall 1999) (in press).
2. Wagner, R.S. and Ellis, W.C., J.Appl. Phys. 4, 89, (1964).
3. Guliants, E. and Anderson, W.A., J.Appl. Phys. 87, 3532, (2000).
4. Hayzelden, C. and Batstone, J.L., J.Appl. Phys. 73, 8279, (1993).
5. Tu, K.N., Alessadrini, E., Chu, W.K., Krautle, H., and Mayer, J.W., Jpn. J. Appl. Phys. 13, 669, (1974).
6. Maillard-Schaller, E., Boyanov, B.I., English, S., and Nemanich, R.J., J.Appl. Phys. 85, 3614, (1999).
7. Kamins, T., “Polycrystalline Silicon for Integrated Circuits and Displays”, Kluwer Academic Publishers, Boston (1998).
8. Schoenfeld, O., Hempel, T., Zhao, X., Aoyagi, Y., Thin Solid Films 261, 236, (1995).
9. Kim, H., Couillard, J.G., and Ast, D.G., Appl. Phys. Lett. 72, 803, (1998).
10. Lam, L.K., Chen, S.-K., and Ast, D.G., Appl. Phys. Lett. 74, 1866, (1999).
11. Hasegawa, S., Arai, M., and Kurata, Y., J.Appl. Phys. 71, 1462, (1992).
12. Mott, N.F., J. Non-cryst. Solids 1, 1, (1968).
13. Streetman, B.G., “Solid State Electronic Devices”, Prentice Hall, Englewood Clifts (1995).


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