Cross-sectional samples for Transmission Electron Microscopy (TEM) have been made without the use of mechanical polishing and ion beam milling. Instead of traditional methods, we have used a combination of electron beam (e-beam) lithography for metal lift-off and reactive ion etching (RIE) to produce TEM samples of selected areas. The sample integrity for handling, dropping and ease of use is excellent, and the large amount of transparent area available for study is nearly 2 orders of magnitude larger than that given by traditional methods. The thickness of the samples is somewhat extreme, on the order of 0.50–1.0μm, but efforts are being made to reduce this dimension in order to make the method applicable to the whole range of materials used in silicon technology.