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Polarized Luminescence of Defects in CuGaSe2

Published online by Cambridge University Press:  01 February 2011

Susanne Siebentritt
Affiliation:
susanne.siebentritt@uni.lu, University of Luxembourg, Faculty of Science, 162a, avenue de la Faïencerie, Luxembourg, L-1511, Luxembourg
Sven Augustin
Affiliation:
augusti@physik.fu-berlin.de, Hahn-Meitner-Institute, Glienicker Str. 100, Berlin, 14109, Germany
Niklas Papathanasiou
Affiliation:
niklas.papathanasiou@hmi.de, Hahn-Meitner-Institute, Glienicker Str. 100, Berlin, 14109, Germany
Damon Hebert
Affiliation:
dhebert@uiuc.edu, University of Illinois, Dept. of Mat. Science and Engineering, Urbana, IL, 61801, United States
Angus Rockett
Affiliation:
arockett@uiuc.edu, University of Illinois, Dept. of Mat. Science and Engineering, Urbana, IL, 61801, United States
Jürgen Bläsing
Affiliation:
Juergen.Blaesing@Physik.Uni-Magdeburg.DE, Otto-von-Guericke Universität Magdeburg, Magdeburg, 39016, Germany
Martha Ch Lux-Steiner
Affiliation:
lux-steiner@hmi.de, Hahn-Meitner-Institute, Glienicker Str. 100, Berlin, 14109, Germany
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Abstract

The linear polarisation of luminescence light allows conclusions on the symmetry of defects in semiconductors with non-cubic symmetry, like chalcopyrites, for which three shallow acceptors have been identified by photoluminescence. The polarisation dependent photoluminescence allows to determine the symmetry of the defects relative to the c-axis of the crystal. A simple geometrical model implies that chalcogen sites show a predominant direction perpendicular to the c-axis, while metal sites show a predominant direction parallel to the c-axis. Since all three shallow acceptors show polarization parallel to the c-axis, it can be concluded that they are situated on a metal site

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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