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Polarization Insensitivity in Interdiffused, Strained InGaAs/InP Quantum Wells

Published online by Cambridge University Press:  10 February 2011

Joseph Micallef ,
James L. Borg  and
Wai-Chee Shiu
Joseph Micallef
Affiliation:
Department of Microelectronics, University of Malta, Msida MSD06, Malta
James L. Borg
Affiliation:
Department of Microelectronics, University of Malta, Msida MSD06, Malta
Wai-Chee Shiu
Affiliation:
Department of Mathematics, Hong Kong Baptist University, Waterloo Road, Hong Kong
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Abstract

Theoretical results are presented showing how quantum well disordering affects the TE and TM absorption coefficient spectra of In0.53Ga0.47As/InP single quantum wells. An error function distribution is used to model the constituent atom composition after interdiffusion. Different interdiffusion rates on the group V and group III sublattices are considered resulting in a strained structure. With a suitable interdiffusion process the heavy hole and light hole ground state, excitonic transition energies merge and the absorption coefficient spectra near the fundamental absorption edge become polarization insensitive. The results also show that this polarization insensitivity can persist with the application of an electric field, which is of considerable interest in waveguide modulators.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 371
Copyright
Copyright © Materials Research Society 1997

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References

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