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Point Defect Supersaturation During Zinc Diffusion into InP

  • D. Wittorf (a1), W. Jäger (a1), A. Rucki (a1), K. Urban (a1), H.-G. Hettwer (a2), N. A. Stolwijk (a2) and H. Mehrer (a2)...

Abstract

Formation of defects during Zn diffusion into undoped and Fe-doped InP single crystals at 700°C has been observed by transmission electron microscopy for various diffusion conditions. The observations are correlated with Zn concentration profiles obtained by electron microprobe measurements and secondary-ion mass spectrometry. The results allow the conclusion that indiffusing interstitial Zn can occupy In sublattice sites via a kick-out reaction. Under appropriate diffusion conditions supersaturations of In self-interstitial atoms result leading to defect formation. Observations in Fe-doped InP suggest that Zn also replaces Fe on In sublattice sites leading to redistribution and to precipitation of Fe.

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Point Defect Supersaturation During Zinc Diffusion into InP

  • D. Wittorf (a1), W. Jäger (a1), A. Rucki (a1), K. Urban (a1), H.-G. Hettwer (a2), N. A. Stolwijk (a2) and H. Mehrer (a2)...

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