Hostname: page-component-7479d7b7d-pfhbr Total loading time: 0 Render date: 2024-07-12T11:25:51.253Z Has data issue: false hasContentIssue false
  • English
  • Français

Point Defect Detector Studies of Ge+ Implanted Silicon upon Oxidation

Published online by Cambridge University Press:  03 September 2012

H. L. Meng ,
S. Prusstn  and
K. S. Jones
H. L. Meng
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
S. Prusstn
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
K. S. Jones
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Get access

Abstract

Previous results [1] have shown that type II (end-of-range) dislocation loops can be used as point defect detectors and are efficient in measuring oxidation induced point defects. This study investigates the interaction between oxidation-induced point defects and dislocation loops when Ge+ implantation was used to form the type II dislocation loops. The type II dislocation loops were introduced via Ge+ implants into <100> Si wafers at 100 keV to at doses ranging from 2×1015 to l×1016/cm2. The subsequent furnace annealing at 900 °C was done for times between 30 min and 4 hr in either a dry oxygen or nitrogen ambient. The change in atom concentration bound by dislocation loops as a result of oxidation was measured by plan-view transmission electron microscopy (PTEM). The results show that the oxidation rate for Ge implanted Si is similar to Si+ implanted Si. Upon oxidation a decrease in the interstitial injection was observed for the Ge implanted samples relative to the Si implanted samples. With increasing Ge+ dose the trapped atom concentration bound by the loops actually decreases upon oxidation relative to the inert ambient implying oxidation of Ge+ implanted silicon can result in either vacancy injection or the formation of an interstitial sink.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 253
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Meng, H. L., Jones, K. S. and Prussin, S. in Structure and Properties of Interfaces in Materials, edited by Clark, W. A. T., Briant, C. L. and Dahmen, U. (Mater. Res. Soc. Proc. Boston, MA 1991), Mater. Res. Soc. Symp. Proc. Vol. 23J.Google Scholar
2. Fahey, P. M., Griffin, P. B., and Plummer, J. D., Rev. Mod. Phys., 61, 289 (1989).Google Scholar
3. Hu, S. M., J. Appl. Phys., 45, 1567 (1974).Google Scholar
4. Antoniadis, D. A. and Moskowitz, I., J. Appl. Phys., 238, 6788 (1982).Google Scholar
5. Prussin, S., J. Appl. Phys. 42, 2850 (1972).Google Scholar
6. Drum, C. M. and van Gelder, W., J. Appl. Phys., 42, 4465 (1972).Google Scholar
7. Hsieh, C. M. and Maher, D. M., J. Appl. Phys., 44, 1302 (1973).Google Scholar
8. Krivánek, O. L. and Maher, D. M., Appl. Phys. Lett., 22, 451 (1978).Google Scholar
9. Booker, G. R. and Tunstall, W. J., Philos. Mag., 12, 71 (1966).Google Scholar
10. Jaccodine, R. J. and Cium, C. M., Appl. Phys. Lett., 8, 29 (1966).Google Scholar
11. Jones, K. S., Prussin, S. and Weber, E., Appl. Phys. A45, 1 (1988).Google Scholar
12. Holland, O. W., White, C. W. and Fathy, D., Appl. Phys. Lett., 51, 520 (1987).Google Scholar
13. Pfiester, J. R. and Griffin, P. B., Appl. Phys. Lett., 52, 471 (1988).Google Scholar
14. LeGoues, F. K., Rosenberg, R. S., and Meyerson, B. S., Appl. Phys. Lett., 54, 644 (1989).Google Scholar
15. Srivastsa, A. R., Sharan, S., Holland, O. W., Narayan, J., J. Appl. Phys., 65, 4028 (1989).CrossRefGoogle Scholar
16. Fathy, D., Holland, O. W., and White, C. W., Appl. Phys. Lett., 51, 1337 (1987).Google Scholar
17. Nayak, D. K., Kamjoo, K., Park, J. S., Woo, J. C. S. and Wang, K. L., Appl. Phys. Lett., 57, 369 (1990).Google Scholar
18. LeGoues, F. K., Rosenberg, R. S., Nguyen, T., Himpsel, F. and Meyerson, B. S., J. Appl. Phys., 65, 1724 (1989).Google Scholar
19. LeGoues, F. K., Rosenberg, R. S., and Meyerson, B. S., Appl. Phys. Lett., 54, 751 (1989).Google Scholar
20. Liou, H. K., Mei, P., Gennser, U., and Yang, E. S., Appl. Phys. Lett., 59, 1200 (1991).Google Scholar
21. Jones, K. S. and Venables, D., J. Appl. Phys., 69, 2931 (1991).Google Scholar
22. LeGoues, F. K., Rosenberg, R. S., Nguyen, T. and Meyerson, B. S. in SiO2and Its interfaces, edited by Pantelides, S. T. and Lucovsky, G. (Mater. Res. Soc. Proc. Pittsburgh, Pennsylvania, 1987), Mater. Res. Soc. Symp. Proc. Vol. 105. p. 313.Google Scholar