Skip to main content Accessibility help
×
Home

PN Junction Formation for High-Performance Insulated Gate Bipolar Transistors (IGBT); Double-Pulsed Green Laser Annealing Technique

  • Toshio Joshua Kudo (a1) and Naoki Wakabayashi (a2)

Abstract

In order to form the deep PN junction demanded for the next generation IGBTs, the double-pulsed laser annealing technique as the low-thermal budget heat treatment has been introduced to activate a B-implant layer and a P-implant layer within the wafer surface to the depth 2μm. The double-pulsed laser annealing is characterized by the deep penetration depth due to a green wavelength of DPSS lasers and precisely and widely controlling of the annealing temperature and time. In the IGBT's structure the deep PN junction at a collector (the rear face) should be formed without damaging thermally circuit elements made of low melting point materials at a gate and an emitter (the front face).

Ion-implant samples using eight-inch (100) Si wafers were prepared as follows: Boron (B) implant was performed at a dose of 1E+15/cm2 at an energy of 40keV and/or phosphorus (P) implant at 1E+13/cm2 at an energy of 400keV. The double-pulsed laser irradiation was carried out at the constant first and second pulse energy density E1=E2=1.8J/cm2 at the delay time td= 0-500ns and the overlap ratio OR=67-90%. The melt depth was up to about 0.3μm. The electrical activation ratio of the B-implant layer within the depth of about 0.6μm was improved from 91% to about 100% with the delay time increase of 0ns to 500ns. The activation ratio of the P-implant layer within the depth of about 2μm was drastically improved from 48% to 82% with the same delay time increase and the carriers in the P-implant layer were distributed deeply from the depth 1.1μm to 1.8μm. Furthermore, with the overlap ratio increase of 67% to 90% the carriers in the P-implant layer were distributed deeply from the depth 1.8μm to 1.9μm and the high activation ratio of 82% was maintained. The high ratio of electrical activation is supported by the defect-free epitaxial regrowth where the majority of the B dopants was diffused in the liquid phase and that of the P dopants in the solid phase.

Copyright

References

Hide All
1 Gutsmann, E., Kanschat, P., Munzer, M., Pfaffenlehner, M. and Laska, T., PCIM Proceedings, p.369 (2003).
2 Laska, T., Munzer, M., Pfirsch, F. and Schaffe, C., Proceedings of the 12th ISPSD, p355 (2000).
3 Otsuki, M., Onozawa, Y., Kirisawa, M., Kanemaru, H., Yoshihara, K., Seki, Y., Proceedings of the 14th ISPSD, p.281 (2002).
4 Yamazaki, K., Kudo, T., Seike, K., Ichishima, D. and Jin, C-G., AM-LCD2002 Digest, p.158 (2002).
5 Laser processing and chemistry, ed. By Bäuerle, D., (Springer, Berlin, Heidelberg, New York 1996) p.436.
6 Poate, J. M., NATO ASI Series E, No.115, p.597 (1986).

Keywords

PN Junction Formation for High-Performance Insulated Gate Bipolar Transistors (IGBT); Double-Pulsed Green Laser Annealing Technique

  • Toshio Joshua Kudo (a1) and Naoki Wakabayashi (a2)

Metrics

Altmetric attention score

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed