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Pld Epitaxial Tin And Pt Ohmic Metallizations To P-Type 6H-Sic Using Focused Ion Beam Surface Modification

Published online by Cambridge University Press:  10 February 2011

A. A. Iliadis ,
S. N. Andronescu ,
K. Edinger ,
J. H. Orloff ,
V. Talyansky ,
R. D. Vispute ,
R. P. Sharma ,
T. Venkatesan ,
M. C. Wood  and
K. A. Jones
A. A. Iliadis
Affiliation:
Electrical Engineering Department, University of Maryland, College Park, Maryland 20742
S. N. Andronescu
Affiliation:
Electrical Engineering Department, University of Maryland, College Park, Maryland 20742
K. Edinger
Affiliation:
Electrical Engineering Department, University of Maryland, College Park, Maryland 20742
J. H. Orloff
Affiliation:
Electrical Engineering Department, University of Maryland, College Park, Maryland 20742
V. Talyansky
Affiliation:
Center for Superconductivity, Department of Physics, University of Maryland, College Park, MD 20742
R. D. Vispute
Affiliation:
Center for Superconductivity, Department of Physics, University of Maryland, College Park, MD 20742
R. P. Sharma
Affiliation:
Center for Superconductivity, Department of Physics, University of Maryland, College Park, MD 20742
T. Venkatesan
Affiliation:
Center for Superconductivity, Department of Physics, University of Maryland, College Park, MD 20742
M. C. Wood
Affiliation:
Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783–1197
K. A. Jones
Affiliation:
Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783–1197
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Abstract

The development of low resistance ohmic metallizations to p-type 6H-SiC using a novel approach of focused ion beam (FIB) surface-modification and ex-situ epitaxial pulsed laser deposition (PLD) of TiN and Pt without further annealing, is reported. The FIB(Ga) surfacemodification and ex-situ epitaxial TiN and Pt PLD metallizations showed a significant reduction in contact resistance with surface-modification, reaching a minimum contact resistance value of 4.4×10−5 Ohm cm2 for the TiN system at an ion dose of 5.0×1016 ions/cm 2 and energy of 20 KeV. This contact resistance value is one of the lowest values reported to date. The Pt system showed increased contact resistance values as compared with the TiN, and reached minimum values for lower ion doses. The contact resistance values reported here are comparable to or lower than those reported for conventionally deposited and annealed contacts to p-type SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 253
Copyright
Copyright © Materials Research Society 1998

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