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Plasma Immersion ion Implantation of Semiconductors

  • N. W. Cheung (a1), W. En (a1), E. Jones (a1) and C. Yu (a1)

Abstract

This paper reviews recent developments of plasma immersion ion implantation (PHI) for semiconductor applications: ultra-shallow junction formation, microscopic conformai doping, metallization, and impurities gettering. We also discuss semiconductor processing issues with PHI: reactor design, wafer charging, surface deposition/etching., and secondary electron emission.

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Plasma Immersion ion Implantation of Semiconductors

  • N. W. Cheung (a1), W. En (a1), E. Jones (a1) and C. Yu (a1)

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