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Plasma Etching Damage to Ferroelectric SrBi2Ta2O9 (SBT) Thin Films and Capacitors

Published online by Cambridge University Press:  10 February 2011

Jun Hee Cho ,
Il Young Kwon ,
Chanro Park ,
Chang Ju Choi ,
Yeo Song Seol ,
D. S. Pyun  and
Il Hyun Choi
Jun Hee Cho
Affiliation:
Memory Research Division, Hyundai Electronic Industries Co. Ltd. 633 Sinhae-ri Ganam-myun Yeoju-kun Kyungki-do, 467–880Korea.
Il Young Kwon
Affiliation:
Memory Research Division, Hyundai Electronic Industries Co. Ltd. 633 Sinhae-ri Ganam-myun Yeoju-kun Kyungki-do, 467–880Korea.
Chanro Park
Affiliation:
Memory Research Division, Hyundai Electronic Industries Co. Ltd. 633 Sinhae-ri Ganam-myun Yeoju-kun Kyungki-do, 467–880Korea.
Chang Ju Choi
Affiliation:
Memory Research Division, Hyundai Electronic Industries Co. Ltd. 633 Sinhae-ri Ganam-myun Yeoju-kun Kyungki-do, 467–880Korea.
Yeo Song Seol
Affiliation:
Memory Research Division, Hyundai Electronic Industries Co. Ltd. 633 Sinhae-ri Ganam-myun Yeoju-kun Kyungki-do, 467–880Korea.
D. S. Pyun
Affiliation:
Memory Research Division, Hyundai Electronic Industries Co. Ltd. 633 Sinhae-ri Ganam-myun Yeoju-kun Kyungki-do, 467–880Korea.
Il Hyun Choi
Affiliation:
Memory Research Division, Hyundai Electronic Industries Co. Ltd. 633 Sinhae-ri Ganam-myun Yeoju-kun Kyungki-do, 467–880Korea.
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Abstract

The effects of reactive ion etching damage on the electrical properties of Pt/SBT/Pt capacitors have been investigated. The plasma treated SBT/Pt layers showed a significant decrease in remanent polarization compared with that of the reference sample. The remanent polarization of the plasma treated layers varied with the gas ratios of the Cl2/Ar plasma. XPS analysis of the plasma treated SBT/Pt samples showed that the surface composition was significantly changed as the gas ratios were varied, which resulted in a polarization decrease in the plasma treated samples. Plasma treatment also caused a voltage shift of the hysteresis loops along the voltage axis. The magnitude of the voltage shift was increased for the chlorine-rich plasma. The results of surface analysis revealed that the voltage shift is caused by oxygen deficiency at the SBT surface. Based on our experimental results, reactive ion etching damage was explained in terms of physical and electrical effects of the plasma on the electrical properties of the ferroelectric Pt/SBT/Pt capacitors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 155
Copyright
Copyright © Materials Research Society 2000

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