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Plasma Enhancement in Direct Nitridation of Silicon and Silicon-Dioxide

Published online by Cambridge University Press:  21 February 2011

T. Ito ,
I. Kato  and
H. Ishikawa
T. Ito
Affiliation:
Fujitsu Laboratories Ltd. 1677 Ono, Atsugi, Japan
I. Kato
Affiliation:
Fujitsu Laboratories Ltd. 1677 Ono, Atsugi, Japan
H. Ishikawa
Affiliation:
Fujitsu Laboratories Ltd. 1677 Ono, Atsugi, Japan
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Abstract

Effects of plasma on direct nitridation of Si and SiO2 have been investigated. The reactor consisted of a quartz tube, SiC-coated carbon-susceptors and an RF-induction coil. The electrical probe technique was used to detect floating potential of the susceptor having Si substrates. The voltage distribution between the susceptor and plasma is influenced by nitridation ambient, pressure, reactor geometry and RF power. The predominant species in NH3 plasma is NH radicals which are thought to be negatively charged in an ion sheath formed around the susceptor. The Cabrera-Mott model has been successfully applied to analyze the nitridation mechanism. Plasma enhancement is mainly caused by activation of characteristic velocity of nitridation species rather than by an increase in the electric field appearing in a film. Enhancement due to fluorine incorporation is also explained with the model. Bombardment of ionic species causes sputtering and deposition resulting in damage, contamination and thickness nonuniformity. Optimizing the plasma conditions, decrease in nitridation temperature, increase in growth rate, and improvements in film composition and interfacial structure have been obtained. It has been found that the further nitridation proceeds, the lower Nss becomes. This technique offers various advantages to the VLSI dielectric process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 473
Copyright
Copyright © Materials Research Society 1985

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