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Plasma Enhanced Chemical Vapor Deposition of Zirconium Nitride Thin Films

Published online by Cambridge University Press:  10 February 2011

Lauren M. Atagi ,
John A. Samuels ,
David C. Smith  and
David M. Hoffman
Lauren M. Atagi
Affiliation:
Los Alamos National Laboratory, MST-7, Los Alamos, NM 87545
John A. Samuels
Affiliation:
Los Alamos National Laboratory, MST-7, Los Alamos, NM 87545
David C. Smith
Affiliation:
Los Alamos National Laboratory, MST-7, Los Alamos, NM 87545
David M. Hoffman
Affiliation:
Department of Chemistry, University of Houston, Houston, TX 77204
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Abstract

Depositions of high quality zirconium nitride, (Zr3N4), films using the metal-organic precursor Zr(Net2)4 were carried out in a microwave argon/ammonia plasma (2.45 GHz). The films were deposited on crystalline silicon wafers and quartz substrates at temperatures of 200–400 °C. The transparent yellow films have resistivity values greater than MΩ cm. The stoichiometry is N/Zr = 1.3, with less than 5 atom % carbon and little of no oxygen. The hydrogen content is less than 9 atom %, and it does not vary with deposition temperature. The growth rates range from 600 to 1200 Å/min, depending on the flow rates and precursor bubbler temperature. X-ray diffraction studies show a Zr3N4 film deposited at 400 °C is polycrystalline with some (220) orientation. The crystallite size is approximately 30 Å. The band gap, as estimated from transmission spectra, is 3.1 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 289
Copyright
Copyright © Materials Research Society 1996

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References

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