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Plasma Deposition of Wide Gap, Highly Photoconductive a-Si:H Thin Films from Disilane-Helium Mixtures
Published online by Cambridge University Press: 21 February 2011
Abstract
Wide gap (>1.9 eV), photoconductive, intrinsic amorphous silicon films were made in a UHV system from Si2H6 -He mixtures. The hydrogen concentrations, optical gaps and photoconductivities were measured. Unlike films made from SiH4, Si2H6-produced films exhibit excellent electronic properties even at low deposition temperatures. The ratio of AM1 photoconductivity to dark conductivity was as high as 107.
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- Copyright © Materials Research Society 1985