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Plasma Chemistry Control of Silicon Nitride Deposition

  • Donald L. Smith (a1), Andrew S. Alimonda (a1), Chau-Chen Chen (a1), Warren Jackson (a1) and Barbara Wacker (a1)...

Abstract

Triple-quadrupole mass spectrometry (TQMS) showed disilane and aminosilanes, SiH4-n(NH2)n, to be the principal products of an ammonia-silane discharge. Disilane can be completely eliminated from the plasma by operating at high power and high NH3/SiH4 ratio, which results in almost complete conversion of silane to aminosilanes by reaction with activated ammonia. Films so grown had no detectable Si-H bonding and greatly reduced ESR spin density in the dark. The triaminosilane radical appears to be a key deposition precursor, progressively decomposing and condensing towards Si3N4 with increasing substrate temperature.

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Plasma Chemistry Control of Silicon Nitride Deposition

  • Donald L. Smith (a1), Andrew S. Alimonda (a1), Chau-Chen Chen (a1), Warren Jackson (a1) and Barbara Wacker (a1)...

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