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Plasma Chemical Aspects of Magnetron Ion Etching with CF4/O2 and CF4/H2

Published online by Cambridge University Press:  25 February 2011

A. A. Bright ,
S. Kaushik  and
G. S. Oehrlein
A. A. Bright
Affiliation:
IBM Watson Research Center, Yorktown Heights, NY 10598
S. Kaushik
Affiliation:
IBM Watson Research Center, Yorktown Heights, NY 10598
G. S. Oehrlein
Affiliation:
IBM Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Magnetron plasmas are of great current interest for semiconductor manufacturing applications because of their high ion density and low operating pressure. We have studied the properties of a magnetron ion etching system using CF4, CF4/O2, and CF4/H2 with respect to the plasma chemistry and the interaction of the plasma with the etched substrate. The higher dissociation and ionization rates lead to significant changes in the species present in the plasma as compared to a conventional reactive ion etching (RIE) plasma. The F atom concentration in a CF4 magnetron plasma is much higher than in a RIE plasma. The addition of O2 leads to only a small further enhancement and produces a decrease in the Si etch rate. Addition of H2 suppresses the F atom concentration slightly, produces very little C-F polymer, and does not lead to highly selective etching of SiO2 over Si. The highly dissociated species in the magnetron plasma produce less C-F polymer, both on the wafer and on the chamber walls, relative to RIE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 98: Symposium K – Plasma Processing and Synthesis of Materials II , 1987 , 217
Copyright
Copyright © Materials Research Society 1987

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References

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