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Plasma Assisted Chemical Vapor Deposition of Aluminum For Metallization In Ulsi

  • Dong-Chan Kim (a1), Young-Soung Kim (a1) and Seung-Ki Joo (a1)

Abstract

An aluminum thin film for ultra large scale integrated circuits(ULSI) metalization has been formed by PACVD using DMEAA(Dimethylethylamine alane) as a precursor. The selectivity was lost but the conformal step coverage was still maintained when the hydrogen plasma was added to conventional CVD process so that perfectly planarized metalization could be obtained.

Comparing to thermal CVD, the reflectivity as well as the resistivity could be much improved especially when the film was deposited on SiO2. The deposition rate and the resistivity of PACVD Al thin films deposited on various substrates such as Si, TiN and SiO2 were compared with those of thermal CVD Al thin films.

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Plasma Assisted Chemical Vapor Deposition of Aluminum For Metallization In Ulsi

  • Dong-Chan Kim (a1), Young-Soung Kim (a1) and Seung-Ki Joo (a1)

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