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Plasma Activated Chemical Vapor Deposition of Polythiophene Thin Films

Published online by Cambridge University Press:  25 February 2011

J. D. Targove ,
P. D. Haaland  and
C. A. Kutsche
J. D. Targove
Affiliation:
Department of Engineering Physics, Air Force Institute of Technology, Wright-Patterson AFB, OH 45433.
P. D. Haaland
Affiliation:
Department of Engineering Physics, Air Force Institute of Technology, Wright-Patterson AFB, OH 45433.
C. A. Kutsche
Affiliation:
Department of Electrical and Computer Engineering, Air Force Institute of Technology, Wright-Patterson AFB, OH 45433.
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Abstract

Polythiophene thin films have been deposited by a novel plasma technique which avoids the disadvantages of conventional plasma-based processes. In particular, the thiophene precursor is injected into an activated argon stream rather than into a plasma. The films produced are dense and uniform, with surface roughness of less than 1 nm. Other film properties are comparable to films deposited by more conventional methods. These films have been processed by reactive ion etching to produce micron-scale features.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 247: Symposium N – Electrical, Optical, and Magnetic Properties of Organic Solid State Materials , 1992 , 847
Copyright
Copyright © Materials Research Society 1992

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References

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