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Planarization Specification for 22nm and Beyond BEOL CMP

Published online by Cambridge University Press:  01 February 2011

Jihong Choi ,
Changan Wang ,
Yayi Wei ,
Eden Zielinski ,
Wei-tsu Tseng ,
Yongsik Moon ,
Mark Kelling  and
Laertis Economikos
Jihong Choi
Affiliation:
jchoi@us.ibm.com, GLOBALFOUNDRIES, ASTA/ISDA Alliance, Hopewell Junction, New York, United States
Changan Wang
Affiliation:
cwangc@us.ibm.com, GLOBALFOUNDRIES, ASTA/ISDA Alliance, Hopewell Junction, New York, United States
Yayi Wei
Affiliation:
wei@us.ibm.com, GLOBALFOUNDRIES, ASTA/ISDA Alliance, Hopewell Junction, New York, United States
Eden Zielinski
Affiliation:
ezielin@us.ibm.com, GLOBALFOUNDRIES, ASTA/ISDA Alliance, Hopewell Junction, New York, United States
Wei-tsu Tseng
Affiliation:
weitsuts@us.ibm.com, IBM Microelectronics, SRDC, Hopewell Junction, New York, United States
Yongsik Moon
Affiliation:
yongsikm@us.ibm.com, GLOBALFOUNDRIES, ASTA/ISDA Alliance, Hopewell Junction, New York, United States
Mark Kelling
Affiliation:
kellingm@us.ibm.com, GLOBALFOUNDRIES, ASTA/ISDA Alliance, Hopewell Junction, New York, United States
Laertis Economikos
Affiliation:
econol@us.ibm.com, IBM Microelectronics, SRDC, Hopewell Junction, New York, United States
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Abstract

This study discusses topography specifications for 22 nm and beyond CMP process and presents recent experimental data. We evaluated local topography impact on CD development in the subsequent layer using specially designed 22-nm test patterns. A wide range of localized erosions were generated in CMP within a single exposure field to avoid any focus-correction effect by the scanner or any other scanner-induced focus change between different levels of local erosion. Local erosions were measured by atomic force microscopy (AFM) after each process step from CMP to lithography to identify the local planarization effect from other film coatings between CMP and lithography. Post-litho CD inspection was done in the subsequent layer over the local erosion areas. Using experimental results, the paper also discusses BEOL pattern design rule for maximizing the process window.

Keywords

CMPCulithography (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1249: Symposia E/F – Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics , 2010 , 1249-E01-04
Copyright
Copyright © Materials Research Society 2010

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