Skip to main content Accessibility help
×
Home

Planarization of Cu and Ta Using Silica and Alumina Abrasives - A Comparison

  • Y. Li (a1) (a2), S. Ramarajan (a3) (a2), M. Hariharaputhiran (a3) (a2), Y. S. Her (a4) and S.V. Babu (a3) (a2)...

Abstract

Experimental results on chemical mechanical polishing of copper and tantalum in the presence of different chemicals, such as Fe(NO3)3, H2O2 and glycine, using both silica and alumina abrasive particles are presented. The polish rates with alumina slurries vary in accordance with the hardness of the material being polished, suggesting a dominant role for a wear mechanism. However, polish rates with silica slurries do not relate directly to the hardness of the film, indicating a more complex removal mechanism.

Copyright

References

Hide All
1. Steigerwald, J.M., Murarka, S.P., Gutmann, R. J., Chemical Mechanical Planarization of Microelectronic Materials, John Wiley & Sons, Inc. (1997).10.1002/9783527617746
2. Hariharaputhiran, M., Li, Y., Ramarajan, S. and Babu, S. V., Chemical-Mechanical Polishing of Ta, Electrochemical and Solid-State Letters, 3 (2), (2000) pp.9598.
3. Ivan'ko, A. A., Handbook of Hardness Data, Israel Program for Sicience Translations, (1971).
4. Luo, Q., Campbell, D. R., and Babu, S. V., Stabilization of Alumina Slurry for Chemical-Mechanical Polishing of Copper, Langmuir, 12(15), (1996) pp. 3563.10.1021/la960062w
5. Ramarajan, S., Hariharaputhiran, M., Her, Y.-S. and Babu, S. V., Hardness of Sub-Micrometer Abrasive Particles and Polish Rate Measurements, Surf. Engg., 15 (4), (1999) pp.324328. 10.1179/026708499101516696
6. Cook, M. L., Chemical Processes in Glass Polishing, J. Non-Crystalline Solids, 120, (1990) pp.152171.10.1016/0022-3093(90)90200-6
7. Li, Y., Hariharaputhiran, M. and Babu, S. V., Chemical-Mechanical Polishing of Copper and Tantalum with Silica Abrasives, submitted to J. Mater. Res., May 2000.10.1557/JMR.2001.0148
8. Iler, R. K., The Colloid Chemistry of Silica and Silicates, Cornell University, Ithaca, New York, (1955).10.1097/00010694-195507000-00014
9. Hariharaputhiran, M., Zhang, J., Li, Y. and Babu, S.V., MRS Proceedings, vol. 566, (1999) pp.129 10.1557/PROC-566-129
10. Ramarajan, S., Li, Y., Hariharaputhiran, M., Her, Y.-S and Babu, S. V., Effect of pH and Ionic Strength on The Chemical-Mechanical Polishing of Tantalum, Electrochemical and Solid-State Letters, 3(5), (2000) pp.232235.10.1149/1.1391010

Planarization of Cu and Ta Using Silica and Alumina Abrasives - A Comparison

  • Y. Li (a1) (a2), S. Ramarajan (a3) (a2), M. Hariharaputhiran (a3) (a2), Y. S. Her (a4) and S.V. Babu (a3) (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed