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Planar Non-Volatile Memory based on Metal Nanoparticles

  • A. Kiazadeh (a1), H. L. Gomes (a1), A. R. Da Costa (a2), P. Rocha (a2), Q. Chen (a2), J. A. Moreira (a2), D. M. De Leeuw (a3) and S. C. J. Meskers (a4)...

Abstract

Resistive switching properties of silver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated. These devices have on/off resistance ratio as high as 103 , retention times reaching to months and good endurance cycles. Temperature-dependent measurements show that the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament.

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Keywords

Planar Non-Volatile Memory based on Metal Nanoparticles

  • A. Kiazadeh (a1), H. L. Gomes (a1), A. R. Da Costa (a2), P. Rocha (a2), Q. Chen (a2), J. A. Moreira (a2), D. M. De Leeuw (a3) and S. C. J. Meskers (a4)...

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