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The Pile-Ups Of Aluminum And Boron In The Sige(C)

Published online by Cambridge University Press:  11 February 2011

Hong-Jyh Li
Affiliation:
International SEMATECH, 2706 Montopolis Drive, Austin, TX 78741
David Onsongo
Affiliation:
Microelectronics Research Center, University of Texas at Austin, TX 78712
Taras A. Kirichenko
Affiliation:
Microelectronics Research Center, University of Texas at Austin, TX 78712
Puneet Kohliand
Affiliation:
Microelectronics Research Center, University of Texas at Austin, TX 78712
Sanjay K. Banerjee
Affiliation:
Microelectronics Research Center, University of Texas at Austin, TX 78712
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Abstract

Dopants diffusion, activation and pile-up due to rapid thermal annealing of implanted Al and B in a thin (∼200Å) Si cap layer on top of Si1-x-yGexCy layer were studied. Experimental results show that both the lattice strain and differential diffusion flux can cause atomic pile-up at the interface and the evidences of those effects were shown independently to each other in this paper. In addition, the pile-up can be extended from the interface to the surface by incorporating C in the underlying layer where B diffusion is much less than in the cap Si. Material analysis shows that both B atomic and activated concentrations in the Si cap layer are increased by 50 %, which suggests that the dopant activation can be increased and junction depth can be decreased at the same time using the inserted Si1-x-yGexCy diffusion blocking layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

Nayak, D. K. and Woo, J. C. S., “Enhanced-Mode Quantum-Well GexSi1-x PMOS,” IEEE Elect. Device Lett., vol. 12, pp. 154, 1991.Google Scholar
Moriya, N., Feldman, L. C., Luftman, H. S., King, C. A., Bevk, J., and Freer, B., “Boron Diffusion in Strained Si1-xGex Epitaxial Layers,” Phys. Rew. Lett., vol. 71, pp. 883, 1993.Google Scholar
3. Yeo, Y.-C., Lu, Q., King, T.-J., and Hu, C., “Enhanced Performance in Sub-100 nm CMOSFETs using Strained Epitaxial Silicon-Germanium,” International Electron Devices Meeting (IEDM), pp. 32_05, 2001.Google Scholar
4. (SIA), S. I. A., International Technology Roadmap for Semiconductors, 2001.Google Scholar
5. Lever, R. F., Bonar, J. M., and Willoughby, A. F. W., “Boron diffusion across silicon–silicon germanium boundaries,” J. Appl. Phys., vol. 83, pp. 1988, 1998.Google Scholar
6. Li, H.-J., Kohli, P., Ganguly, S., Kirichenko, T. A., Banerjee, Sanjay, Zeitzoff, P., and Torres, K., “Boron Diffusion and Activation in the Presence of Other Species,” presented at International Electron Devices Meeting, 2000.Google Scholar
7. Li, C., John, S., Quinones, E., and Banerjee, S., J. Vacuum Sci. Technol. A, vol. 14, pp. 170, 1996.Google Scholar
8. Tajima, Y., Kijima, K., and Kingery, W. D., J. Chem. Phys., vol. 77, pp. 2592, 1982.Google Scholar
9. Fang, T. T., Fang, W. T. C., Griffin, P. B., and Plummer, J. D., “Calculation of the fractional interstitial component of boron diffusion and segregation coefficient of boron in Si0.8Ge0.2,” Appl. Phys. Lett., vol. 68, pp. 791, 1996.Google Scholar
10. Li, H.-J., Kirichenko, T. A., Kohli, P., Banerjee, S. K., Graetz, E., Tichy, R., and Zeitzoff, P., “Boron Retarded Diffusion in the Presence of Indium or Germanium,” will be appeared in IEEE Electron Device Letters, Nov. 2002.Google Scholar