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Piezoresistivity in Ion Implanted Polymer Films

Published online by Cambridge University Press:  22 February 2011

Y.Q. Wang ,
D.S. Robey ,
R.E. Giedd  and
M.G. Moss
Y.Q. Wang
Affiliation:
Department of Physics and Astronomy, Southwest Missouri State University, Springfield, Missouri 65804
D.S. Robey
Affiliation:
Department of Physics and Astronomy, Southwest Missouri State University, Springfield, Missouri 65804
R.E. Giedd
Affiliation:
Department of Physics and Astronomy, Southwest Missouri State University, Springfield, Missouri 65804
M.G. Moss
Affiliation:
Brewer Science Inc., Rolla, Missouri 65401
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Abstract

Piezorcsistive properties have important sensor applications. In this study we find that several ion implanted polymers exhibit piezorcsistive properties. Piezoresistive gauge factors of these films are found to be significantly greater than those of metals, however smaller than those of semiconductors. Potential advantages of using the piezorcsistive properties of these films are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 349
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Harsanyi, G., Sensors and Actuators A (Physical) A25–27 (1–3), 853 (1991).Google Scholar
2 Spceter, T.H., Proceedings of the SPIE 1005, 31 (1989).Google Scholar
3 Reboul, J.P., Malacan, P., Toureilla, A., Hadjiri-Mebarki, S., and Merle, P., Revue de Physique Applique 25 (4), 347 (1990).Google Scholar
4 Rojek, Z. and Wojawodzki, T.H., ISHM'91 Proceedings, pp. 158–163.Google Scholar
5 Frazier, A.B., Khan, M., and Allen, M.G., Mat.Res.Soc.Symp.Proc., April 1992, San Francisco, CA.Google Scholar
6 Castelli, G. and Meroni, V., Proc. of 5th European Hybrid Microelectronics Conf., Stresa, Italy, 1985, pp. 528–536.Google Scholar
7 Wang, Y.Q., Mohite, S.S., Bridwell, L.B., Giedd, R.E., and Sofield, C.J., J. Mater. Res. 8 (2), 388 (1993).Google Scholar
8 Feng, Y.P., Robey, D., Wang, Y.Q., Giedd, R.E., and Moss, M.G., Materials Letters 17, 167 (1993).Google Scholar
9 Ziegler, J.F., Bicrsack, J.P., and Littmark, , The Stopping and Range of Ions in Solids, Pergamon Press, Oxford (1985).Google Scholar
10 Shankland, E.P., Sensors, pp. 22–26, August 1991.Google Scholar
11 Holmes, P.J., Microelectroniccs and Reliability 12, 395 (1973).Google Scholar
12 Wang, Y.Q., Bridwell, L.B., and Giedd, R.E., J. Appl. Phys. (Comm.) 73 (1), 474 (1993).Google Scholar
13 Ohmura, Y., Phys. Rev. B 42, 9178 (1990).Google Scholar
14 Giedd, R.E., Moss, M.G., Craig, M.M., and Robertson, D.E., Nucl. Instr. Meth., B 59/60, 1253 (1991).Google Scholar