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Piezoelectric Scattering in Large-Bandgap Semiconductors and Low-Dimensional Heterostructures

Published online by Cambridge University Press:  10 February 2011

B. K. Ridley ,
N. A. Zakhleniuk ,
C. R. Bennett ,
M. Babiker  and
D. R. Anderson
B. K. Ridley
Affiliation:
Department of Electrical Engineering, Cornell University, USA
N. A. Zakhleniuk
Affiliation:
Department of Physics, University of Essex, Colchester, C04 3SQ, UK
C. R. Bennett
Affiliation:
Department of Physics, University of Essex, Colchester, C04 3SQ, UK
M. Babiker
Affiliation:
Department of Physics, University of Essex, Colchester, C04 3SQ, UK
D. R. Anderson
Affiliation:
Department of Physics, University of Essex, Colchester, C04 3SQ, UK
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Abstract

We develop a rigorous theory of piezoacoustic phonon limited electron transport in bulk GaN and GaN-based heterostructures. Within the Boltzmann equation approach we derive a new expression for the momentum relaxation rate and show that the Pauli principle restrictions are comparable in importance to a screening effect at temperatures up to 150 K provided that the electron density is large. This is of particular importance for electrons in GaN/AlN-based quantum wells where very high electron densities initiated by the piezoelectric effect have recently been reported. Variations of the piezoacoustic phonon limited electron mobility with the lattice temperature and with the electron density for a zinc-blende and wurtzite GaN are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 507
Copyright
Copyright © Materials Research Society 1999

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References

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