Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-26T18:29:08.879Z Has data issue: false hasContentIssue false

Physicochemical Properties of Rf Magnetron Sputtered Lead Zirconate Titanate Thin Films

Published online by Cambridge University Press:  25 February 2011

E. Catitan
Affiliation:
Institut Universitaire de Technologie, Université Paris Sud (XI), Plateau du Moulon, BP 127, 91403 ORSAY CEDEX, FRANCE
B. Agius
Affiliation:
Institut Universitaire de Technologie, Université Paris Sud (XI), Plateau du Moulon, BP 127, 91403 ORSAY CEDEX, FRANCE
H. Achard
Affiliation:
LETI Département de Microélectronique 85 X, 38041 GRENOBLE CEDEX, FRANCE
J.P. Joly
Affiliation:
LETI Département de Microélectronique 85 X, 38041 GRENOBLE CEDEX, FRANCE
J.C. Cheang Wong
Affiliation:
Groupe de Physique des Solides del'Université Paris 7 et Paris 6, Tour 23, 2 place Jussieu, 75251 PARIS CEDEX 05, France
C. Ortega
Affiliation:
Groupe de Physique des Solides del'Université Paris 7 et Paris 6, Tour 23, 2 place Jussieu, 75251 PARIS CEDEX 05, France
J. Siejka
Affiliation:
Groupe de Physique des Solides del'Université Paris 7 et Paris 6, Tour 23, 2 place Jussieu, 75251 PARIS CEDEX 05, France
Get access

Abstract

Lead zirconate titanate thin films have been grown by rf magnetron sputtering an oxide target of nominal composition [Pb(Zr0.55,Ti0.45)O3 or PZT] in argon. The kinetics of the sputtering process and the effect of sputtering parameters on film composition have been studied and related to the continuously monitored optical emission of the plasma. The relative and absolute cation and oxygen compositions of the thin films were determined by a new method based on the simultaneous use of Rutherford backscattering spectroscopy (RBS) and nuclear reaction analysis (NRA) induced by a deuteron beam. The conditions for the deposition at room temperature of stoichiometric PZT films were established.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1]. Krupanidhi, S.B., Maffei, N., Sayer, M. and El-Assal, K., J. Appl. Phys. 54, 6601, (1983)Google Scholar
[2]. Roy, R.A., Etzold, K.F., and Cuomo, J.J., Mat. Res. Soc. Symp. Proc., 200, 77, (1990)Google Scholar
[3]. Cattan, E., Agius, B., Achard, H., Joly, J.P., Seventh European Meeting on Ferroelectricity, Dijon 1991, to be published in Ferroelectrics.Google Scholar
[4]. Amsel, G., Wong, J.C. Cheang, Ortega, C., Rigo, S., Siejka, J., Vega, F., Agius, B. and Cattan, E., to be published in Nucl. Instr. and Meth.BGoogle Scholar
[5]. Striganov, A.R. and Sventitskii, N.S.Tables of spectral lines of neutral and ionized atoms”, IFI/Plenum Data Corporation - New-York - Washington - 1968 Google Scholar
[6]. Sreenivas, K. and Sayer, M., J. Appl. Phys. 64, 1484, (1988)Google Scholar
[7]. Kakegawa, K., Mohri, J., Takahashi, T., Yamamura, H. and Shirasaki, S., Solid State Comm., 24, 769, (1977)Google Scholar