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A Physically Based Quantum Correction Model for DG MOSFETs

  • Markus Karner (a1), Martin Wagner (a2), Tibor Grasser (a3) and Hans Kosina (a4)

Abstract

In this work we present a physically based quantum correction model for highly scaled double gate (DG) CMOS devices. In contrast to previous work, our quantum correction model is based on the bound states that form in the Si film. The Eigenenergies and expansion coefficients of the wave functions are tabulated for arbitrary parabolic approximations of the potential in the structure. This enables a highly efficient use for TCAD applications.

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1 Hänsch, W. et al., SSE, vol.32, pp. 839849, (1991)
2 Dort, M. Van et al., SSE, vol. 37, no. 3, pp. 411414 (1994)
3 Jungemann, C. et al., Proc. MSM, pp. 458461 (2001)
4 Nguyen, C. et al., Proc. NSTI-Nanotech, vol. 3, pp. 3336 (2005)
5 Wagner, M. et al., Proc. IWPSD, vol. 1, 458461 (2005)
6 Yang, N.. Et al, IEEE Transaction on Electron Devices, vol. 46, pp. 14641471 (1999)
7 Stern, F., Phys.Rev.B, vol. 5, pp. 48914899 (1972)
8 IuE, Minimos-NT 2.1 User's Guide, TU Wien, http://www.iue.tuwien.ac./software/minimos-nt (2004

Keywords

A Physically Based Quantum Correction Model for DG MOSFETs

  • Markus Karner (a1), Martin Wagner (a2), Tibor Grasser (a3) and Hans Kosina (a4)

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