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Physical Properties of Undoped and Doped Microcrystalline SiC:H Deposited by PECVD

  • F. Demichelis (a1), C. F. Pirri (a1), E. Tresso (a1), G. Dellamea (a2), V. Rigato (a2) and P. Rava (a3)...

Abstract

Experimental results on a systematic investigation on the elemental composition, structural, optical and electrical properties of undoped and doped microcrystalline silicon carbide films deposited by Plasma Enhanced Chemical Vapor Deposition.

The doped samples show high values of dark conductivity accompanied by good optical properties so to satisfy the requirements for heterojunction window material.

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References

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