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Physical origin of colossal dielectric constant in CaCu3Ti4O12 thin film by Pulsed Laser Deposition

  • Guochu Deng (a1), Tomoaki Yamada (a2) and Paul Muralt (a3)

Abstract

The (001) preferentially oriented CCTO thin film was grown on Pt/Ti/TiO2/Si (100) substrate by pulsed laser. I-V and C-V relationships of the CCTO thin film showed characteristics typical of a tunnel metal-insulator-semiconductor (MIS) structure and its capacitance response is the origin of the high apparent dielectric constant observed in CCTO thin films. The very thin insulating layer on top of the film can be reduced in thickness by treatment in HCl acid, as shown by smaller threshold voltages in the I-V curves. The overall behavior is compatible with a conduction activation energy of ∼80 to 100 meV in the bulk of the film, and a diffusion potential at the interface of 500 to 800 meV. The acceptor concentration is of the order of 1019cm−3.

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Physical origin of colossal dielectric constant in CaCu3Ti4O12 thin film by Pulsed Laser Deposition

  • Guochu Deng (a1), Tomoaki Yamada (a2) and Paul Muralt (a3)

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