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The Physical and Electrical Properties of Polycrystalline Si1−xGex as a Gate Electrode Material for ULSI CMOS Structures

  • Sung-Kwan Kang (a1), Dae-Hong Ko (a1), Tae-Hang Ahn (a2), Moon-Sik Joo (a2), In-Seok Yeo (a2), Sung-Jin Whoang (a3), Doo-Young Yang (a3), Chul-Joo Whang (a3) and Hoo-Jeong Lee (a4)...


Poly Si1−xGex films have been suggested as a promising alternative to the currently employed poly-Si gate electrode for CMOS technology due to lower resistivity, less boron penetration, and less gate depletion effect than those of poly Si gates. We investigated the formation of poly Si1−xGex films grown by UHV CVD using Si2H6 and GeH4 gases, and studied their microstructures as well as their electrical characteristics. The Ge content of the Si1−xGex films increased linearly with the flux of the GeH4 gas up to x=0.3, and saturated above x=0.45. The deposition rate of the poly Si1−xGex films increased linearly with the flux of the GeH4 gas up to x=0.1, above which it is slightly changed. The resistivity of the Si1−xGex films decreased as the Ge content increased, and was about one half of that of poly-Si films at the Ge content of 45%. The C-V measurements of the MOSCAP structures with poly Si1−xGex gates demonstrated that the flat band voltage of the poly Si1−xGex films was lower than that of poly-Si films by 0.2V.



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