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The Physical and Electrical Properties of Polycrystalline Si1−xGex as a Gate Electrode Material for ULSI CMOS Structures

Published online by Cambridge University Press:  14 March 2011

Sung-Kwan Kang ,
Dae-Hong Ko ,
Tae-Hang Ahn ,
Moon-Sik Joo ,
In-Seok Yeo ,
Sung-Jin Whoang ,
Doo-Young Yang ,
Chul-Joo Whang  and
Hoo-Jeong Lee
Sung-Kwan Kang
Affiliation:
Dept. of Ceramic Engineering, Yonsei University, Seoul, Korea
Dae-Hong Ko
Affiliation:
Dept. of Ceramic Engineering, Yonsei University, Seoul, Korea
Tae-Hang Ahn
Affiliation:
Hyundai Electronics Industries Co. Ltd., Memory Research & Development Division, Kyungki-do, Korea
Moon-Sik Joo
Affiliation:
Hyundai Electronics Industries Co. Ltd., Memory Research & Development Division, Kyungki-do, Korea
In-Seok Yeo
Affiliation:
Hyundai Electronics Industries Co. Ltd., Memory Research & Development Division, Kyungki-do, Korea
Sung-Jin Whoang
Affiliation:
Ju-Sung Co. Ltd., Kyungki-do, Korea
Doo-Young Yang
Affiliation:
Ju-Sung Co. Ltd., Kyungki-do, Korea
Chul-Joo Whang
Affiliation:
Ju-Sung Co. Ltd., Kyungki-do, Korea
Hoo-Jeong Lee
Affiliation:
Stanford University, Stanford, California 93405, USA
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Abstract

Poly Si1−xGex films have been suggested as a promising alternative to the currently employed poly-Si gate electrode for CMOS technology due to lower resistivity, less boron penetration, and less gate depletion effect than those of poly Si gates. We investigated the formation of poly Si1−xGex films grown by UHV CVD using Si2H6 and GeH4 gases, and studied their microstructures as well as their electrical characteristics. The Ge content of the Si1−xGex films increased linearly with the flux of the GeH4 gas up to x=0.3, and saturated above x=0.45. The deposition rate of the poly Si1−xGex films increased linearly with the flux of the GeH4 gas up to x=0.1, above which it is slightly changed. The resistivity of the Si1−xGex films decreased as the Ge content increased, and was about one half of that of poly-Si films at the Ge content of 45%. The C-V measurements of the MOSCAP structures with poly Si1−xGex gates demonstrated that the flat band voltage of the poly Si1−xGex films was lower than that of poly-Si films by 0.2V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 611: Symposium C – Gate Stack & Silicide Issues in Silicon Processing , 2000 , C7.1.1
Copyright
Copyright © Materials Research Society 2000

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References

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