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A photothermal method of simultaneous determination of ultra-shallow junction depth and abruptness

  • Alex Salnick (a1), Lena Nicolaides (a1), Jon Opsal (a1), Amitabh Jain (a2), Duncan Rogers (a2) and Lance Robertson (a2)...

Abstract

Thermal wave (TW) studies of ultra-shallow junctions (USJ) formed by ion implantation into a semiconductor wafer followed by rapid thermal annealing (RTP) are described. It is shown that using the TW technique allows for a simultaneous determination of the most important USJ parameters – depth and profile abruptness. Experimental results for junction depth and abruptness obtained on a set of B+-implanted, RTP-annealed USJ samples show better than 0.99 correlations to the corresponding secondary ion mass spectroscopy (SIMS) data.

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