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Photoreflectance Characterization of Silicon Films on Insulator

Published online by Cambridge University Press:  16 February 2011

Adriana Giordana ,
R. Glosser ,
Joseph G. Pellegrino ,
S. Qadri ,
M. E. Twigg ,
E. D. Richmond ,
Keith Joyner  and
Gordon Pollack
Adriana Giordana
Affiliation:
Physics Programs, University of Texas at Dallas, Richardson, TX 75083
R. Glosser
Affiliation:
Physics Programs, University of Texas at Dallas, Richardson, TX 75083
Joseph G. Pellegrino
Affiliation:
NIST, Gaithersburg, MD 20879
S. Qadri
Affiliation:
Naval Research Laboratory, Washington, DC 20375
M. E. Twigg
Affiliation:
Naval Research Laboratory, Washington, DC 20375
E. D. Richmond
Affiliation:
Naval Research Laboratory, Washington, DC 20375
Keith Joyner
Affiliation:
Texas Instruments Inc., Dallas, TX 75265
Gordon Pollack
Affiliation:
Texas Instruments Inc., Dallas, TX 75265
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Abstract

Photoreflectance (PR) was used to study crystalline quality and stress in silicon films on insulator. The position and amplitude of the 3.4 eV PR silicon structure was monitored for both MBE silicon on sapphire (SOS) and SIMOX structures. The SOS film thicknesses ranged from 6 to 4000 nm. The shift in energy of the 3.4 eV structure from its bulk position is dependent on the sample thickness and on the strain in the films. In the SIMOX case, the amplitude of the 3.4 eV PR signal provided information about the crystalline quality of the top silicon layer for a set of six samples, each one removed at a different step of a process involving three implantation-anneal cycles. In this case the PR signal appeared to deteriorate with the each cycle undergone by the samples. Further investigations are needed to resolve the discrepancy bet ween these SOS results and the ones obtained in an earlier set of measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 188: Symposium K – Thin Films: Stresses and Mechanical Properties II , 1990 , 349
Copyright
Copyright © Materials Research Society 1990

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References

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