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Photoreflectance Characterization and Control of Defects in Gan by Etching with an Inductively Coupled Plasma

Published online by Cambridge University Press:  11 February 2011

O. J. Glembocki ,
D. K. Gaskill ,
S. M. Prokes  and
S. W. Pearton
O. J. Glembocki
Affiliation:
Naval Research Laboratory, Code 6862, Washington, D.C., 20375
D. K. Gaskill
Affiliation:
Naval Research Laboratory, Code 6862, Washington, D.C., 20375
S. M. Prokes
Affiliation:
Naval Research Laboratory, Code 6862, Washington, D.C., 20375
S. W. Pearton
Affiliation:
Department of Material Science and Engineering, University of Florida, Gainsville, FL 32611
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Abstract

Photoreflectance (PR) is used to detect and characterize the electronic effects etch-induced defects in GaN that is exposed to an Ar or Ar/Cl inductively coupled plasma (ICP). Because of the sensitivity of PR we can follow the formation of etch-induced defects as a function of ion energies and densities. We show that at low RF powers, below 100W, the surface improves in electronic quality, but as the power is increased beyond 200W, etch-induced defects, are formed. The use of an Ar/Cl mixture plays a critical role in control of etch-induced defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.56
Copyright
Copyright © Materials Research Society 2003

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References

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