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Photon-Induced Adhesion and Chemical Changes in Aluminium Films on Silicon.

  • Andrew J. Kellock (a1) (a2), J. Liesegang (a2), G. L. Nyberg (a2) and J. S. Williams (a1)


In the present study, thin layers of Al (<500 Å), deposited on Si under varying vacuum and substrate-cleaning conditions, have been irradiated with various wavelength photons. The films and interfacial oxide layers have been analysed with Rutherford backscattering and channeling (RBS-C), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) techniques both before and after irradiation. Results indicate that substantial oxygen uptake, indiffusion and interface reaction can take place in some thin Al films during photon irradiation at room temperature. Such photon-induced chemical changes correlate with an increase in film adhesion.



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