Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-25T12:46:28.871Z Has data issue: false hasContentIssue false
  • English
  • Français

Photon-Controlled Growth of Multilayered Structures

Published online by Cambridge University Press:  25 February 2011

Douglas H. Lowndes ,
D. B. Geohegan ,
D. Eres ,
D. N. Mashburn  and
S. J. Pennycook
Douglas H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
D. B. Geohegan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
D. Eres
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
D. N. Mashburn
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
Get access

Abstract

Pulsed ArF excimer laser (193 nm) photolysis has been used to deposit entirely amorphous and mixed amorphous/polycrystalline superlattice structures containing Si, Ge and Si3N4. High resolution in situ optical reflectivity measurements were used to monitor and/or control deposition. Transmission electron microscope cross-section views demonstrate that amorphous superlattice structures having highly reproducible layer thicknesses (from about 50 to several hundred A), and sharp interlayer boundaries, can be deposited at low substrate temperatures under laser photolytic control.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987 , 23
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. See Eres, D., Lowndes, D. H., Geohegan, D. B., Mashburn, D. N. and Pennycook, S. J., “Laser Photochemical Growth of Amorphous Silicon at Low Temperatures and Comparison with Thermal CVD,” Symposium B of this meeting.Google Scholar
2.Itoh, U., Toyoshima, Y., Onuki, H., Washida, N. and Ibuki, T., J. Chem. Phys. 85, 4867 (1986).Google Scholar
3.King, K. K., Tavitian, V., Geohegan, D. B., Cheng, E.A.P., Piette, S. A., Scheltens, F. J. and Eden, J. G., Mat. Res. Soc. Symp. Proc. 75, 189 (1987).Google Scholar
4.Motooka, T. and Greene, J. E., J. Appl. Phys. 59, 2015 (1986).Google Scholar
5.Donnelly, V. M., Baronavski, A. P. and McDonald, J. R., Chem. Phys. 43, 271 (1979).Google Scholar
6.Watanabe, K., J. Chem. Phys. 22, 1564 (1964).Google Scholar
7.Wu, C.-H., J. Phys. Chem. 91, 5054 (1987).Google Scholar