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Photoluminescence Study of Energy Transfer Processes in Erbium Doped AlxGal−xAs Grown by MBE

Published online by Cambridge University Press:  21 February 2011

Tong Zhang ,
J. Sun ,
N.V. Edwards ,
D.E. Moxey ,
R.M. Kolbas  and
P.J. Caldwell
Tong Zhang
Affiliation:
Department of Materials Science and Engineering
J. Sun
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
N.V. Edwards
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
D.E. Moxey
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
R.M. Kolbas
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
P.J. Caldwell
Affiliation:
Martin Marietta, 1450 S. Rolling Rd., Baltimore, MD 21227-3898
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Abstract

Sharp photoluminescence from the intra-4f shell of Er3+ is observed from erbium doped AlxGal-xAs (0 ≤x ≤ 1) grown by molecular beam epitaxy. The intensity of the luminescence from the erbium is strongly dependent on the aluminum composition with a maximum at x ≈ 0.6. We will present a model that explains the variation in intensity based on the energy transfer coupling efficiency between the host semiconductor and the optically active erbium ions. The coupling efficiency is dominated by the alignment or misalignment of the erbium energy levels with the energy bands of the host semiconductor and by the excess carrier lifetime in the host. The data and model, which are presented here for the first time, are consistent with our previous work on the effects of co-doping with Be or Si and with other workers' measurements of thermal quenching in rare earth doped semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 257
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Smith, R.S., Müller, H.D., Ennen, H., Wennekers, P. and Maier, M., Appl. Phys. Lett. 50, 49 (1987).Google Scholar
2. Galtier, P., Pocholle, J.P., Charasse, M.N., Cremoux, B. de and Hirtz, J.P., Appl. Phys. Lett. 55, 105 (1989).Google Scholar
3. Galtier, P., Charrasse, M.N., Chazelas, J., Huber, A.M., Grattepalin, C., Siejka, J. and Hirtz, J.P., Inst. Phys. Conf. Ser. No. 96: Chapt. 2, 61 (1989).Google Scholar
4. Galtier, P., Benyattou, T., Pocholle, J.P., Charasse, M.N., Guillot, G. and Hirtz, J.P., Inst. Phys. Conf. Ser. No. 106: Chapt. 5, 327 (1990).Google Scholar
5. Schmitt-Rink, S., Varma, C.M. and Levi, A.F.J., Phys. Rev. Lett. 66, 2782 (1991).Google Scholar
6. Benyattou, T., Seghier, D., Guillot, G., Moncorge, R., Galtier, P. and Charasse, M.N., Appl. Phys. Lett. 58, 2132 (1991).Google Scholar
7. Sanfaty, R., Cohen, A.R.E. and Logan, R.A., J. Appl. Phys. 59, 780 (1986).Google Scholar
8. Kalt, H., Smirl, A.L. and Boggess, R.F., J. Appl. Phys. 65, 294 (1989).Google Scholar
9. Bohnert, K., Kalt, H., Smirl, A.L., Norwood, D.P., Boggess, T.F. and D'Haenens, I.J., Phys. Rev. Lett. 60, 37 (1988).Google Scholar
10. Caldas, M.J., Fazzio, A. and Zunger, A., Appl. Phys. Lett. 45, 671 (1984).Google Scholar
11. Ledebo, L. and Ridley, B.K., J. Phys. C, 15, L961 (1982).Google Scholar
12. Neuhalfen, A.J. and Wessel, B.W., Appl. Phys. Lett. 60, 2657 (1992).Google Scholar
13. Casey, H.C. and Panish, M.B., Heterostructure Lasers, Part A, (Academic Press, CA, 1978), pp. 187–194.Google Scholar
14. Wang, S., Fundamentals of Semiconductor Theory and Device Physics, (Prentice-Hall, NJ, 1989), pp. 522.Google Scholar
15. Kaminski, A.A., Laser Crystals, Springer Ser. in Optical Sci., Vol. 14, (Springer-Verlag, Berlin,1990), pp. 116–318.Google Scholar
16. Mita, Y., Yoshida, T., Yagami, T. and Shionoga, S., J. Appl. Phys. 71, 938 (1992).Google Scholar
17. Mears, R.J. and Baker, S.R., Opt. and Quant. Elect. 24, 517 (1992).Google Scholar
18. Saito, R. and Kimura, T., Phys. Rev. B, 46, 1423 (1992).Google Scholar
19. Hemstreet, L.A., Mat. Sci. Forum, Vol. 10–12, 85 (1986).Google Scholar
20. Zhang, T., Hwang, Y., Sun, J., Edwards, N.V., Kolbas, R.M. and Caldwell, P.J., 1992 Elect. Mat. Conf. MIT, Cambridge, MA June 1992. Paper submitted to J. Elect. Mat.Google Scholar