Skip to main content Accessibility help
×
Home

Photoluminescence Study of Defects in GaN Grown by Molecular Beam Epitaxy

  • Michael A. Reshchikov (a1), Manhong H. Zhang (a2), Jie Cui (a1), Paolo Visconti (a2), Feng Yun (a1) and Hadis Morkoç (a1)...

Abstract

Defect related photoluminescence (PL) in unintentionally doped GaN layers grown by molecular beam epitaxy (MBE) was studied. Under certain growth conditions, we observed new defect-related bands: a red band with a maximum at about 1.88 eV and a green band with a maximum at about 2.37 eV. The quenching of these bands with increasing temperature took place with an activation energy of about 120-140 meV at temperatures above 100 K. Moreover, the red band exhibited an increase of PL intensity with an activation energy of 1.2 meV in the range of 10-60 K. The observed behavior is explained by invoking a configuration coordinate model and that we speculate the defects to be partially nonradiative and related to Ga atoms.

Copyright

References

Hide All
1. Stoneham, A. M., “Theory of Defects in Solids”, Clarendon Press, Oxford (1975).
2. Ogino, T. and Aoki, M., Jap. J. Appl. Phys. 19, 2395 (1980).
3. Reshchikov, M. A., Shahedipour, F., Korotkov, R. Y., Ulmer, M. P., and Wessels, B. W., Physica B 273–274, 103 (1999).
4. Reshchikov, M. A., Shahedipour, F., Korotkov, R. Y., Ulmer, M. P., and Wessels, B. W., J. Appl. Phys. 87, 3351 (2000).
5. Reynolds, D. C., Look, D. C., Jogai, B., and Morkoç, H., Sol. St. Comm. 101, 643 (1997).
6. Shinoya, S., Koda, T., Era, K., and Fujiwara, H., J. Phys. Soc. Japan 19, 1157 (1964).
7.More specifically, the mode is quasi-local if its energy falls to the acoustic or optic band of the lattice phonons and it is true local if its energy falls to the frequency gap.
8. Reshchikov, M. A., Yi, G.-C., and Wessels, B. W., Phys. Rev. B 59, 13176 (1999).
9.The quantum efficiency has been estimated as a ratio of the integrated PL intensity to the intensity of the incident laser light with correction for the PL registration optics and refractive index of GaN.
10. Hayes, W. and Stoneham, A. M., “Defects and Defect Processes in Nonmetallic Solids”, A Wiley-Interscience Publ., New-York (1985), pp. 202209.
11. Boguslawski, P., Phys. Rev. B 51, 17255 (1995).
12. Gorczyca, I., Svane, A., and Christensen, N. E., Phys. Rev. B 60, 8147 (1999).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed