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Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs†

Published online by Cambridge University Press:  15 February 2011

Douglas H. Lowndes  and
Bernard J. Feldman
Douglas H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
Bernard J. Feldman
Affiliation:
Dept. of Physics, University of Missouri, St. Louis, MO 63121
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Abstract

In an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 689
Copyright
Copyright © Materials Research Society 1982

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Footnotes

†

Research sponsored in part by the Division of Materials Sciences, U.S. Department of Energy under contract W–7405–eng–26 with the Union Carbide Corporation.

References

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