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Photoluminescence Kinetics Model of P-Type GaAs:Nd

Published online by Cambridge University Press:  10 February 2011

U. K. Saha  and
H. J. Lozykowski
U. K. Saha
Affiliation:
School of Electrical Engineering and Computer Science, Ohio University, Athens, Ohio 45701
H. J. Lozykowski
Affiliation:
School of Electrical Engineering and Computer Science, Ohio University, Athens, Ohio 45701
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Abstract

In this work we have developed a model for the kinetics of the energy transfer from the host lattice to the core states of rare earth (RE) centers. We have derived a set of kinetics differential equations of RE luminescence in p-type semiconductor. Numerically computed rise and decay time of RE luminescence as a function of excitation power shows good agreement with the experimental data obtained for p-type GaAs:Nd.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 285
Copyright
Copyright © Materials Research Society 1996

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