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Photoluminescence in Porous Silicon: Evidence for the Quantum Confinement Model

Published online by Cambridge University Press:  15 February 2011

David L. Naylor ,
Sung B. Lee ,
John C. Pincenti  and
Brett E. Bouma
David L. Naylor
Affiliation:
University of Illinois at Chicago, Department of Electrical Engineering and Computer Science, Box 4348, Chicago, IL 60680
Sung B. Lee
Affiliation:
University of Illinois at Chicago, Department of Electrical Engineering and Computer Science, Box 4348, Chicago, IL 60680
John C. Pincenti
Affiliation:
University of Illinois at Chicago, Department of Electrical Engineering and Computer Science, Box 4348, Chicago, IL 60680
Brett E. Bouma
Affiliation:
University of Illinois at Chicago, Department of Physics, Box 4348, Chicago, IL 60680
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Abstract

Photoluminescence spectra have been measured in porous silicon following electrochemical etching in dilute hydrofluoric acid (HF). The effects of HF concentration during etching on the efficiency and peak wavelength of photoluminescence have been investigated. The effects of temperature between 25°C and 200°C on PL spectra have been recorded. Photoluminescence lifetimes as a function of wavelength have been studied following ultrashort UV photoexcitation. A number of lifetime components in the decay are observed the longest in good agreement over the wavelength range of 500 to 600 nm with a silicon quantum wire model. At longer wavelengths a departure from lifetimes of the wire model is observed and two hypotheses for the discrepancy are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 111
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Sanders, G.D. and Chang, Y-C., ”Optical Properties of Free Standing Silicon Quantum Wires”; “Theory of Optical Properties of Quantum Wires in Porous Silicon”, preprints.Google Scholar
[2] Tischler, M.A., Collins, R.T., and Stathis, J.H., ”Luminescence Degradation in Porous Silicon”, preprint.Google Scholar