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Photoluminescence from Si/Ge Superlattices

Published online by Cambridge University Press:  28 February 2011

G.F.A. van de Walle ,
E.A. Montie ,
D.J. Gravesteijn  and
C.W. Fredriksz
G.F.A. van de Walle
Affiliation:
Philips Research Laboratories, P.O. Box 80000, 5600 JA Eindhoven, The Netherlands
E.A. Montie
Affiliation:
Philips Research Laboratories, P.O. Box 80000, 5600 JA Eindhoven, The Netherlands
D.J. Gravesteijn
Affiliation:
Philips Research Laboratories, P.O. Box 80000, 5600 JA Eindhoven, The Netherlands
C.W. Fredriksz
Affiliation:
Philips Research Laboratories, P.O. Box 80000, 5600 JA Eindhoven, The Netherlands
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Abstract

The luminescence of short period Si/Ge superlattices was systematically studied as a function of composition, strain and superlattice period. With Rutherford backscattering spectrometry the composition was determined, while X-ray diffraction was used to determine the strain and superlattice period. Two luminescence bands around 1,6 µm were observed. Etching experiments showed that the signal originated from the superlattice. Changes in wavelength and intensity were found to be related to the composition and the strain, while no clear influence of the superlattice period was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 643
Copyright
Copyright © Materials Research Society 1990

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