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Photoluminescence And The Optimum Growth Conditions Of High Quality ZnS Epitaxial Layers

  • Sungun Nam (a1), Jongkwang Rhee (a1), Young-Moon Yu (a1), Byungsung O (a1), Ki-Seon Lee (a1), Y. D. Choi (a2), H. J. Yun (a2), Chang Soo Kim (a3) and Yang-June Jung (a4)...

Abstract

High quality ZnS epilayers were grown on GaAs and GaP substrates by hot wall epitaxy. The optimum temperature conditions for high quality ZnS epilayer were found. The photoluminescence(PL) spectrum of high quality ZnS epilayers showed sharp and narrow exciton peaks and no self-activated peaks. The room temperature energy gap of ZnS/GaAs was found to be 3.729 eV from the experimentally observed free exciton PL peaks. The temperature dependence of the PL intensity showed a two step quenching process and the temperature dependence of the PL linewidth broadening was tried to analyze in terms of exciton scattering process. From the splitting of the heavy hole and the light hole exciton peaks, the strain was identified.

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1. Summers, C.J., Tong, W., Tran, T.K., Ogle, W., Park, W. and Wagner, B.K., J. Cryst. Growth 159, p. 64(1996).
2. Nakamura, S., Sakashita, T., Yoshimura, K. and Yamada, Y., Jpn. J. Appl. Phys. 36, p. L491 (1997).
3. Liu, C. H., Yokoyama, M. and Su, Y. K., Jpn. J. Appl. Phys. 35(10), p. 5416(1996).
4. Heuken, M., Sollner, J., Guimaraes, F. E. G., Marquardt, K. and Heime, K., J. Cryst. Growth 117, p. 336(1992).
5. BenzIIA, R. G., Huang, P. C., Stock, S. R. and Summers, C. J., J. Cryst. Growth 86, p. 303 (1988)
6. Yodo, T., Uedo, K., Morio, K., Yamashita, K. and Tanaka, S., J. Appl. Phys. 68, p. 5674(1990)
7. Kanehisa, O., Shiiki, M., Migita, M. and Yamamoto, H., J. Cryst. Growth 86, p. 367(1988).
8. Abounadi, A., Blasio, M. Di, Bouchara, D., Calas, J., Averous, M., Brot, O., Briot, N., Cloitre, T., Aulombard, R. L. and Gil, B., Phys. Rev. B 50, p. 11677(1994).
9. Tran, T. K., Park, W., Tong, W., Kyi, M. M., Wagner, B. K. and Summers, C., J. Appl. Phys. 81, p. 2803(1997).
10. Taguchi, T., Yokogawa, T. and Yamashita, H., Solid State Commun. 49, p. 551 (1984).
11. Fernandez, M., Prete, P., Lovergine, N., Mancini, A. M., Cingolani, R., Vasanelli, L. and Perrone, M. R., Phys. Rev. B 55, p. 7660(1997).
12. Kawakami, Y., Taguchi, T. and Hiraki, A., J. Cryst. Growth 89, p. 331 (1988).
13. Heuken, M., Sollner, J., Guimaraes, F. E. G., Marquardt, K. and Heime, K., J. Cryst. Growth 117, p. 336(1992).
14. O'Donell, K. P. and Chen, X., Appl. Phys. Lett. 58, p. 2924(1991).
15. Giles, N. C., Lee, J., Rajavel, D. and Summers, C. J., J. Appl. Phys. 73, p. 4541 (1993).

Photoluminescence And The Optimum Growth Conditions Of High Quality ZnS Epitaxial Layers

  • Sungun Nam (a1), Jongkwang Rhee (a1), Young-Moon Yu (a1), Byungsung O (a1), Ki-Seon Lee (a1), Y. D. Choi (a2), H. J. Yun (a2), Chang Soo Kim (a3) and Yang-June Jung (a4)...

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