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Photoluminescence and Structure of Chemically Etched Si

  • S. Shih (a1), K. H. Jung (a1), T. Y. Hsieh (a1), J. Sarathy (a1), C. Tsai (a1), K.-H. Li (a1), J. C. Campbel (a1) and D. L. Kwong (a1)...

Abstract

We demonstrate for the first time that chemical etching of Si in HF-HNO3-based solution without applying bias can produce a room temperature photoluminescent porous Si layer. Scanning electron microscope studies reveal a surface morphology similar to that of the conventionally anodized porous Si. The formation mechanism of the chemically etched (CE) film can be explained by a local anodization concept. X-ray diffraction studies on the luminescent CE porous Si show a broad amorphous peak.

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Photoluminescence and Structure of Chemically Etched Si

  • S. Shih (a1), K. H. Jung (a1), T. Y. Hsieh (a1), J. Sarathy (a1), C. Tsai (a1), K.-H. Li (a1), J. C. Campbel (a1) and D. L. Kwong (a1)...

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