Skip to main content Accessibility help
×
Home

Photoluminescence and Raman spectra in Ga-doped ZnO layers on sapphire

  • Michael A. Reshchikov (a1), S. Nagata (a2), J. Xie (a3), B. Hertog (a4) and A. Osinsky (a5)...

Abstract

Ga-doped ZnO layers were grown on sapphire substrates by molecular beam epitaxy (MBE). Low-temperature photoluminescence (PL) and room-temperature Raman spectra were investigated. Defect-related modes at 277 and 510 cm−1 appeared in the Raman spectrum for Ga-doped layers. The PL spectrum is dominated by a donor-bound exciton peak at 3.356 eV. A weak yellow luminescence (YL) band peaking at 2.1-2.2 eV was studied in detail. It shifted to higher photon energies (up to 0.1 eV) with increasing excitation intensity. The YL band is attributed to transitions from shallow donors to a deep acceptor. The acceptor is thought to be a Zn vacancy-related defect because the intensity of the YL band decreased dramatically with Ga doping.

Copyright

References

Hide All
1. Özgür, Ü., Alivov, Ya. I., Liu, C., Teke, A., Reshchikov, M. A., Dogan, S., Avrutin, V., Cho, S.-J., and Morkoç, H., J. Appl. Phys. 98, 041301 (2005).
2. Reshchikov, M. A. and Morkoç, H., J. Appl. Phys. 97, 061301 (2005).
3. Harima, H., J. Phys.: Condens. Matter 14, R967 (2002).
4. Heo, Y. W., Norton, D. P., and Pearton, S. J., J. Appl. Phys. 98, 073502 (2005).10.1063/1.2064308
5. Djurišic, A. B., Leung, Y. H., Small 2, 944 (2006).10.1002/smll.200600134
6. Reshchikov, M. A., Gu, X., Nause, J., and Morkoç, H., Mater. Res. Soc. Symp. Proc. 892, FF23.11 (2006).
7. Decremps, F., J. Pellicer-Porres, Saitta, A. M., Chervin, J.-C., and Polian, A., Phys. Rev. B 65, 092101 (2002) and references therein.10.1103/PhysRevB.65.092101
8. Kaschner, A. et al., Appl. Phys. Lett. 80, 1909 (2002).
9. Bundesmann, C., Ashkenov, N., Schubert, M., Spemann, D., Butz, T., Kaidashev, E. M., Lorenz, M., and Grundmann, M., Appl. Phys. Lett. 83, 1974 (2003).10.1063/1.1609251
10. Alarcon-Llado, E., Cusco, R., Artus, L., Gonzalez-Diaz, G., Martil, I., Jimenez, J., Wang, B., and Callahan, M., Mater. Res. Sci. Symp. Proc. 957, K0724 (2007).
11. Ye, J. D., Gu, S. L., Zhu, S. M., Liu, S. M., Zheng, Y. D., Zhang, R., and Shi, Y., Appl. Phys. Lett. 86, 192111 (2005).10.1063/1.1928322
12. Meyer, B. K. et al. , Phys. Stat. Sol. (b) 241, 231 (2004).10.1002/pssb.200301962
13. Janotti, A. and Van de Walle, C. G., Phys. Rev. B 76, 165202 (2007).
14. Tuomisto, F., Ranki, V., Saarinen, K., and Look, D. C., Phys. Rev. Lett. 91, 205502 (2003).
15. Reshchikov, M. A., Appl. Phys. Lett., 88, 202104 (2006).
16. Stoehr, M., Juillaguet, S., Kyaw, T. M., and Wen, J. G., Phys. Stat. Sol. 4, 1432 (2007).
17. Liu, Z. F., Shan, F. K., Sohn, J. Y., Kim, S. C., Kim, K. Y., Li, Y. X., and Li, Y. S., J. of Electroceramics 13, 183 (2004).
18. Reshchikov, M. A., Yi, G.-C., and Wessels, B. W., Phys. Rev. B 59, 13176 (1999).
19. Reshchikov, M. A., Shahedipour, F., Korotkov, R. Y., Ulmer, M. P., and Wessels, B. W., J. Appl. Phys. 87, 3351 (2000).
20. Levanyuk, A. P. and Osipov, V. V., Sov. Phys. Usp. 24, 187 (1981).
21. Shklovskii, B. I. and Efros, A. L., Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984), pp. 5373 and 253313.
22. Mott, N. F., Proc. Phys. Soc. London 62, 416 (1949).10.1088/0370-1298/62/7/303

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed