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Photoluminescence and Raman spectra in Ga-doped ZnO layers on sapphire

  • Michael A. Reshchikov (a1), S. Nagata (a2), J. Xie (a3), B. Hertog (a4) and A. Osinsky (a5)...


Ga-doped ZnO layers were grown on sapphire substrates by molecular beam epitaxy (MBE). Low-temperature photoluminescence (PL) and room-temperature Raman spectra were investigated. Defect-related modes at 277 and 510 cm−1 appeared in the Raman spectrum for Ga-doped layers. The PL spectrum is dominated by a donor-bound exciton peak at 3.356 eV. A weak yellow luminescence (YL) band peaking at 2.1-2.2 eV was studied in detail. It shifted to higher photon energies (up to 0.1 eV) with increasing excitation intensity. The YL band is attributed to transitions from shallow donors to a deep acceptor. The acceptor is thought to be a Zn vacancy-related defect because the intensity of the YL band decreased dramatically with Ga doping.



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