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Photoluminescence and Plane-View Tem Studies of Epitaxial ZnSe Layers on GaAs After H2 Gas Heat-Treatment

Published online by Cambridge University Press:  28 February 2011

Maki Sekoguchi-pl ,
Takashi Murase  and
Tsunemasa Taguchi
Takashi Murase
Affiliation:
Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan
Tsunemasa Taguchi
Affiliation:
Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan
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Abstract

Low-temperature photoluminescence and plane-view TEN observations have been carried out to investigate the strain and microstructural defects in MOCVD-grown ZnSe/(100)GaAs after post- growth annealing in H2gas at temperature between 350 and 500V. A 0.35 µm thick ZnSe epitaxial layer is originally under compres- sive strain, but after annealing this receives considerably tensile strain, and the neutral deep-acceptor bound exciton () line and the edge-emission band at about 2.72 eV newly appear. The observed changes are interpreted in terms of the energy down- shift of the excitonic lines and deviation from stoichiometry. The annealed film, which deteriorated as a result of generations of dislocation tangles and small loops, results in the strong deep-level emissions around 2.25 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 429
Copyright
Copyright © Materials Research Society 1989

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