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Photoluminescence and Photoluminescence Excitation Spectra of GaAs Grown Directly on Si

Published online by Cambridge University Press:  25 February 2011

S. Zemon ,
S. K. Shastry ,
P. Norris ,
C. Jagannath  and
G. Lambert
S. Zemon
Affiliation:
GTE Laboratories, Inc., 40 Sylvan Road Waltham, MA 02254
S. K. Shastry
Affiliation:
GTE Laboratories, Inc., 40 Sylvan Road Waltham, MA 02254
P. Norris
Affiliation:
GTE Laboratories, Inc., 40 Sylvan Road Waltham, MA 02254
C. Jagannath
Affiliation:
GTE Laboratories, Inc., 40 Sylvan Road Waltham, MA 02254
G. Lambert
Affiliation:
GTE Laboratories, Inc., 40 Sylvan Road Waltham, MA 02254
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Abstract

The photoluminescence of GaAs/Si grown by OMCVD has been analyzed as a function of temperature and the dominant high temperature line identified as a conduction-band-to-valence-band transition. Photoluminescence excitation spectra indicate that the transition is excitonic at 4.2 K. A second line, also identified as intrinsic, dominates the spectra below 100 K. A biaxial tensile strain is proposed to account for the two intrinsic lines through a splitting of the valence band degeneracy.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 203
Copyright
Copyright © Materials Research Society 1986

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References

1. Wang, W. I., Appl. Phys. Lett. 44, 1149 (1984).Google Scholar
2. Tsaur, B-Y. and Metze, G. M., Appl. Phys. Lett. 45, 535 (1984).Google Scholar
3. Metze, G. M., et al., Appl. Phys. Lett. 45, 1107(1984).CrossRefGoogle Scholar
4. Masselink, W. T., et al., Appl. Phys. Lett. 45, 1309 (1984); R. Fischer, et al., J. Appl. Phys. 58, 374 (1985).Google Scholar
5. Akiyama, M., et al., Jpn. J. Appl. Phys. 23, L843 (1984).Google Scholar
6. Norris, P., et al., J. Cryst. Growth 68, 437 (1984).CrossRefGoogle Scholar
7. Shastry, S. K. and Zemon, S. (to be published).Google Scholar
8. Casey, R. C., Jr. and Kaiser, R. H., J. Electrochem. Soc. 114, 149 (1967); H. Kressel and M. Ettenberg, Appl. Phys. Lett. 23, 511 (1973); S. Zemon and G. Lambert (private communication).Google Scholar
9. Osbourn, G. C., J. Appl. Phys. 53, 1586 (1982).CrossRefGoogle Scholar