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Photo-Leakage-Current Analysis of Poly-Si TFT by Using Rear Irradiation OBIC Method

  • Masatoshi Wakagi (a1), Tatsuya Ookubo (a1), Masahiko Ando (a1), Genshiro Kawachi (a1), Akio Mimura (a1) and Tetsuroh Minemura (a1)...

Abstract

Photo-leakage-current of poly-Si (polycrystalline Si) TFFs has been investigated by using the rear irradiation OBIC (Optical Beam Induced Current) method. In the case of the offset gate TFIs, it was found that the photo-leakage-current was generated in the offset region of the drain electrode side. In order to reduce the photo-leakage-current, low concentration phosphor (P) was doped in the offset region, which corresponds to LDD (Lightly Doped Drain) structure. In the LDD TFT, the photo leakage current at the offset region decreased remarkably, because of the reduction of hole transportation in this region.

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1) Kobayashi, K., Niwano, Y., Iwasawa, T., Morita, T., and Nagano, S., Digest of Technical Papers AM-LCD 95, 11 (1995).
2) Berkel, C. von and Powell, M.J., J. Appl. Phys. 60, 1521, (1986).
3) Nishida, S. and Fritzche, H., Digest of Technical Papers AM-LCD 94, 124, (1994).
4) Wakagi, M., Ando, M., Watanabe, T., and Minemura, T., Digest of Technical Papers, AM-LCD 97,79 (1997).
5) Wakagi, M., Ando, M., Watanabe, T., and Minemura, T., Proceedings of the Fourth International Display Workshop. 227 (1997)

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Photo-Leakage-Current Analysis of Poly-Si TFT by Using Rear Irradiation OBIC Method

  • Masatoshi Wakagi (a1), Tatsuya Ookubo (a1), Masahiko Ando (a1), Genshiro Kawachi (a1), Akio Mimura (a1) and Tetsuroh Minemura (a1)...

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