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Photoemission Study of the Physical Nature of the InP Near-Surface Defect States

  • K. K. Chin (a1), R. Cao (a2), T. Kendelewicz (a2), K. Miyano (a2), J. J. Yeh (a2), S. Doniach (a2), I. Lindau (a2) and W. E. Spicer (a2)...

Abstract

The physical nature of the InP near-surface defect acceptor and donor states are studied by using photoemission spectroscopy. It is found that the In/n-InP(110) interface band bending does not start until the In coverage reaches about 0.3 monolayer (ML), while the In/p-InP(110) band bending is almost saturated at 0.3 ML. The annealing effect on the band bending of clean cleaved n-and p-type InP(llO) surfaces is also studied. It is found that annealing of the clean surface creates an irreversible band bending effect on the p-InP(110), but the n-InP(110) almost does not show any band bending after low temperature annealing. Based on these two striking differences in the band bending behavior of n- and p-type InP, it is proposed that the physical nature of InP near-surface defect acceptor and donor levels may be different and that phosphorus vacancies are the cause of p-InP surface Fermi level pinning.

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Photoemission Study of the Physical Nature of the InP Near-Surface Defect States

  • K. K. Chin (a1), R. Cao (a2), T. Kendelewicz (a2), K. Miyano (a2), J. J. Yeh (a2), S. Doniach (a2), I. Lindau (a2) and W. E. Spicer (a2)...

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